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Patent：2026 Electrostatic discharge protection structurePatent：2026 Semiconductor devicePatent：2026 Semiconductor structure and method of forming sameCertification：CNS 45001（Laosheng (UK) Co., Ltd. Taiwan Branch）Certification：ISO 45001（Laosheng (UK) Co., Ltd. Taiwan Branch）Certification：ISO 50001（SGS Taiwan Ltd.）Company website：http://www.vis.com.twPhone：03-5770355Main product：Semiconductors

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