Hua Hsu Advanced Technology Co., Ltd.
華旭先進股份有限公司
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2015Founded
NT$1.5BPaid-in capital
2Plants
2Certifications
6Patents
< NT$20MRevenue band (est.)
- Unified Business No.
- 24804181
- Industry
- Electronic Components (2,523)
- Main products
- Semiconductors (243)
- Location
- NO. 8, GONGYEQU 10TH RD., XIEHE VIL., XITUN DIST., TAICHUNG CITY, TAIWAN, R.O.C.
Taichung City (17,121) · Xitun Dist. (804) - Listing
- Emerging stock (TPEx) (359) 6682
- Registration status
- Approved / Active
- Organisation type
- Company Limited by Shares
- Founded
- 2015-12-23
- Paid-in capital
- NT$ 1,521,059,020
- Representative
- Huang Wen-juei
- Phone
- 04-23586649
- Website
- http://www.huahsu.com/
- Exporter
- Yes — registered with the Trade Administration
- Annual revenue band
- < NT$20M estimated
- Ownership
- Group subsidiary / corporate-held · GIGA SOLAR MATERIALS CORPORATION
- Representative tenure
- In office since 2021-09 (5 yrs); last handover 2021-09
- Growth & profitability
- Revenue 2026-09 YoY -18.6%, year-to-date +45.9%
Gross margin 22.8%, operating margin 6.2%, net margin 3.1% (2026-Q2 YTD) - Compliance record
- Labour Standards Act penalties: 1 case(s) in 5 years, latest 2025-11-06, fines NT$ 60,000 (Art. 24) — matched by company name
Plants 2
- Plant · No. 8, Gongyequ 10th Rd., Xitun Dist., Taichung City In production
- Plant 5 · No. 9, Gongyequ 42nd Rd., Xitun Dist., Taichung City In production
Certifications 2
- IATF 16949 (433)Self-reported
- ISO 9001 (4,293)Self-reported
Processes & materials 8
- AI server thermal solution (1) · Extracted from websiteSelf-reported
- Wafer epitaxy (1) · Extracted from websiteSelf-reported
- Precision grinding & polishing (1) · Extracted from websiteSelf-reported
- Laser perforation (1) · Extracted from websiteSelf-reported
- TGV glass substrate (1) · Extracted from websiteSelf-reported
- Reclaimed wafer (1) · Extracted from websiteSelf-reported
- Liquid cooling pipe material (1) · Extracted from websiteSelf-reported
- Silicon carbide wafer (1) · Extracted from websiteSelf-reported
Patents 6
- 2026 Silicon carbide epitaxial structure and method for forming silicon carbide epitaxial structure
- 2025 Wafer processing method
- 2025 Method for reducing defects in silicon carbide epitaxy
Recent changes 1
- PenaltiesLabour Standards Act penalties: latest case 2025-11-06; 1 case(s) in 5 years, fines NT$ 60,000